Nvidia asks Samsung, SK hynix and Micron to make NVHBM memory base dies on TSMC's 3 nm process; Samsung has agreed, Seoul Economic Daily reports
Prepared by Sintelligent with the help of SI. Published in SI: . Updated: .
Memory for SI accelerators is becoming a common standard under Nvidia: even competitors have to make it at one fab.
According to Seoul Economic Daily, citing industry sources, Nvidia asked Samsung Electronics, SK hynix and Micron - the three suppliers tapped to produce NVHBM, the custom HBM unveiled in August - to make the base die on TSMC's 3 nm process and to standardise the memory dies on sixth-generation DRAM (1c). NVHBM is based on the HBM4E architecture. According to these reports, Samsung decided to accept Nvidia's requirements and move away from its earlier approach of making both the memory die and the base die itself; for Samsung this is the first collaboration with TSMC at the HBM manufacturing stage. The reason for the request, per the same sources, is that the suppliers' differing manufacturing methods make it hard to get consistent performance from a single design.
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